18 lines
1.4 KiB
Plaintext
18 lines
1.4 KiB
Plaintext
Name,Description,Flags,Value
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(poly.X.1),All FETs would be checked for W/Ls as documented in spec 001-02735 (Exempt FETs that are pruned; exempt for W/L's inside :drc_tag:`areaid.sc` and inside cell name scs8*decap* and listed in the MRGA as a decap only W/L),,
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(poly.X.1a),Min & max dummy_poly L is equal to min L allowed for corresponding device type (exempt rule for dummy_poly in cells listed on Table H3),,
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(poly.1a),Width of poly,,0.150
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(poly.1b),Min channel length (poly width) for pfet overlapping lvtn (exempt rule for dummy_poly in cells listed on Table H3),,0.350
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(poly.2),Spacing of poly to poly except for poly.c2 and poly.c3; Exempt cell: sr_bltd_eq where it is same as poly.c2,,0.210
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(poly.3),Min poly resistor width,,0.330
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(poly.4),Spacing of poly on field to diff (parallel edges only),P,0.075
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(poly.5),Spacing of poly on field to tap,P,0.055
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(poly.6),Spacing of poly on diff to abutting tap (min source),P,0.300
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(poly.7),Extension of diff beyond poly (min drain),P,0.250
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(poly.8),Extension of poly beyond diffusion (endcap),P,0.130
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(poly.9),Poly resistor spacing to poly or spacing (no overlap) to diff/tap,,0.480
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(poly.10),Poly can't overlap inner corners of diff,,
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(poly.11),No 90 deg turns of poly on diff,,
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(poly.12),"(Poly NOT (nwell NOT hvi)) may not overlap tap; Rule exempted for cell name ""s8fgvr_n_fg2"" and gated_npn and inside UHVI.",P,
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(poly.15),Poly must not overlap diff:rs,,
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