skywater-pdk/docs/rules/assumptions/04-physical.csv

1	Material Thicknesses			Value (um)		Variable name
2	field oxide (above silicon surface) ... underneath poly			0.07		FOXSTEP
3	min. etch and fill capability for isolation, licon, and met1			0.15		DEFC
4	min. etch and fill capability for mcon			0.14		CEFC
5	min. etch and fill capability for via			0.18		VEFC
6	poly cap after SPE			0.2		OVGTTH
7	poly thickness			0.18		POLYTH
8	oxide spacer			0.05		SpThickn
9	Pre-LI ILD thickness			0.5		ILDTHICKN
10	Licon1 etch angle (deg)			10		LICETANG
11	Standard Licon bottom CD			0.08		LBCD
12	Mcon enclosure by Li			0		mconLiEnclosure
13	Via1 slope			0.02		Via1Slope
14	Oxide Bias for MM1			0.6		BiasMM1
15	Oxide Bias for MM2			0.6		BiasMM2
16	Oxide Bias for MM3			1.15		BiasMM3
17	Oxide Bias for MM4			1.15		BiasMM4
18	LI1 thickness for antenna ratio calculations			0.1		LiThick
19	Metal 1 thickness for antenna ratio calculations (S8D*)			0.35		Met1Thick
20	Metal 2 thickness for antenna ratio calculations (S8D*)			0.35		Met2Thick
21	Inductor thickness for antenna ratio calculation (S8D*)			4		IndmThick
22	Metal 3 thickness for antenna ratio calculation (S8Q/SP8Q)			0.8		Met3thick_q
23	Metal4 thickness for antenna ratio calculation (S8Q*/SP8Q)			2		Met4Thick_q
24	Metal 3 thickness for antenna ratio calculation (S8P*/SP8P*)			0.8		Met3thick_p
25	Metal4 thickness for antenna ratio calculation (S8P*/SP8P*)			0.8		Met4Thick_p
26	Metal5 thickness for antenna ratio calculation (S8P*/SP8P* with 2um thick metal)			2		Met5Thick_p
27	Metal5 thickness for antenna ratio calculation (S8P*/SP8P* with 1.2um thick metal)			1.2		Met5Thickp_12
28	Metal 2 thickness for antenna ratio calculations (SP8T/S8T*)			0.35		Met2_Qthick
29	Metal 3 thickness for antenna ratio calculations (S8T* other than S8TM*)			0.85		Met3_Qthick
30	Metal 3 thickness for antenna ratio calculations (S8TM* flow)			2		Met3_TMthick
31	Metal 3 thickness for antenna ratio calculations (SP8T flow)			0.8		Met3_SP8Tthick
32	Photoresist thickness			1.14		PRTHICKN
33	Photoresist thickness for HV Tip Implants			0.3		PrThickImplant
34	Min width of tip implant opening			0.1		minTip_impW
35	NTM shadowing			0.16		ntmShadowing
36	HVNTM shadowing			0.232		hvntmShadowing
37	HVPTM shadowing			0.089		hvptmShadowing
38	pseudo-shadowing			0.045		pseudoShadowing
39	Channel length for low Vt PMOS			0.35		lvtpmos_poly
40	Width of the Low Leakage gate on each side of LowVt Pmos connected to power rails (requirement based on exp data)			0.28		LvtEnc_forPowerRail
41	CD tolerance for PDM (3s)			1		PdmCD_tol
42	Min process bias 3s tolerance			0.032		PHTOL
43	Min process bias 3s tolerance for poly			0.02		PHP1TOL
44	Minimum Space and Overlap			Value (um)		Variable name
45	Minimum mcon overlap onto LI for reproducible contact resistance			0.12		TCONOVLP
46	Dogbone PR decay length (SRS 8/4/99)			0.2		DBPRDEC
47	Bowing of rectangular contact (per edge) -- seal ring sizing			0.015		TBOWINGSEAL
48	Waffling / Pattern Density			Value		Variable name
49	S8 average FOM PD (extractions from logic device)			0.45		FOMPDAVG
50	Size of small PD extraction box for rough tolerance (um)			700		SMALLPDBOX
51	Size of large PD extraction box for rough tolerance (um)			2000		LARGEPDBOX
52	Min pattern density for oxide			0.75		OxideMinPD
53	Min MM* PD range			0.3		MMPDrange
54	FOM 700um box PD tolerance for CMP (SOI8 PCR2) for all technologies			0.15		FOM700TOL
55	Stepping box shift as a percent of box size			0.5		BOXSHIFT
56	Maximum metal waffle drop pattern density in the frame			0.55		PD_FrameWP
57	Window size for frame waffle drop PD check			100		WP_PDWINDOW
58	Step size for frame waffle drop PD check			10		WP_PDSTEP
59	Other			Value		Variable name
60	Poly resistor width and spacing to reduce CD variation (um)			0.33		POLYRCD
61	Poly resistor width and spacing to reduce CD variation (um)			0.48		POLYRSPC
62	Spacing between slotted_licons (Not applicable when the two edges L= 0.19um)			0.51		LICM1SLSP1
63	Precision resistor width to accommodate 6 contacts across			2.03		PRECRESW
64	Li resistor width (to drop one Licon w/o dogbones)			0.29		LIRESCD
65	Correction factor for spacing to a wide metal line			2		BIGMF
66	Min spacing for created dnwell to pnp.dg (more restrictive than dnwell.4 rule)			5		cdnwPnpSpc
67	Min spacing between nwell and deep nwell on separate nets (Taken from dnwell.3 from S4* TDR *N plus rounded up, IGK request.)			6		nwellDnwellSpc
68	Min space between deep nwells used as photo diode (um)			5		PDDnwSpc
69	Min space between dnwell (used for photo diode and other deep nwell (um)			5.3		PDDnwSpc1
70	Min/Max width of nwell inside deep nwell (for photo diodes)			0.84		PDNwmCD
71	Min/Max enclosure of nwell by deep nwell (for photo diode)			1.08		PDNwmDnwEnc
72	Min/Max width of tap inside deep nwell (for photo diode)			0.41		PDTapCD
73	Min/Max enclosure of tap by nwell inside deep nwell (for photo diode)			0.215		PDTapNwmEnc