1.5 KiB
1.5 KiB
| 1 | Name | Description | Flags | Value | Unit |
|---|---|---|---|---|---|
| 2 | (poly.X.1) | All FETs would be checked for W/Ls as documented in spec 001-02735 (Exempt FETs that are pruned; exempt for W/L's inside :drc_tag:`areaid.sc` and inside cell name scs8*decap* and listed in the MRGA as a decap only W/L) | |||
| 3 | (poly.X.1a) | Min & max dummy_poly L is equal to min L allowed for corresponding device type (exempt rule for dummy_poly in cells listed on Table H3) | |||
| 4 | (poly.1a) | Width of poly | 0.150 | µm | |
| 5 | (poly.1b) | Min channel length (poly width) for pfet overlapping lvtn (exempt rule for dummy_poly in cells listed on Table H3) | 0.350 | µm | |
| 6 | (poly.2) | Spacing of poly to poly except for poly.c2 and poly.c3; Exempt cell: sr_bltd_eq where it is same as poly.c2 | 0.210 | µm | |
| 7 | (poly.3) | Min poly resistor width | 0.330 | µm | |
| 8 | (poly.4) | Spacing of poly on field to diff (parallel edges only) | P | 0.075 | µm |
| 9 | (poly.5) | Spacing of poly on field to tap | P | 0.055 | µm |
| 10 | (poly.6) | Spacing of poly on diff to abutting tap (min source) | P | 0.300 | µm |
| 11 | (poly.7) | Extension of diff beyond poly (min drain) | P | 0.250 | |
| 12 | (poly.8) | Extension of poly beyond diffusion (endcap) | P | 0.130 | |
| 13 | (poly.9) | Poly resistor spacing to poly or spacing (no overlap) to diff/tap | 0.480 | µm | |
| 14 | (poly.10) | Poly can't overlap inner corners of diff | |||
| 15 | (poly.11) | No 90 deg turns of poly on diff | |||
| 16 | (poly.12) | (Poly NOT (nwell NOT hvi)) may not overlap tap; Rule exempted for cell name "s8fgvr_n_fg2" and gated_npn and inside UHVI. | P | ||
| 17 | (poly.15) | Poly must not overlap diff:rs | |||
| 18 | (poly.16) | Inside RF FETs defined in Table H5, poly cannot overlap poly across multiple adjacent instances |