4.0 KiB
4.0 KiB
1 | Description | Model Structure | Modeled RX | Actual CAD RX | RX Discrepancy | Modeled CX | Actual CX | CX Discrepancy | ||
---|---|---|---|---|---|---|---|---|---|---|
2 | Contacts | Sheets | Contacts | Sheets | Sheet | Sheet | ||||
3 | All Periphery FETs | mXXXX d g s b w l m ad as pd ps nrd nrs | none | diff(min) | licon/mcon/vias | diff(ext)/poly/li/m1/m2-m3 | none | poly/licon/li | li/m1/m2-m3 | li-negligible |
4 | 20V NDEFETs NONISO | xXXXX d g s b w l m ad as pd ps nrd nrs | none | diff(min)/licon | mcon/vias | diff(ext)/poly/li/m1/m2-m3 | none | poly/licon/li | li/m1/m2-m3 | li-negligible |
5 | 20V NDEFETs ISO | xXXXX d g s b w l m ad as pd ps nrd nrs | none | diff(min)/licon | mcon/vias | diff(ext)/poly/li/m1/m2-m3 | none | poly/licon/li/dnwdiode_psub | li/m1/m2-m3 | li-negligible |
6 | 20V PDEFETs | xXXXX d g s b w l m ad as pd ps nrd nrs | none | diff(min)/licon | mcon/vias | diff(ext)/poly/li/m1/m2-m3 | none | poly/licon/li | li/m1/m2-m3/dnwhvdiode_psub | li-negligible |
7 | Cell FETs | NOT EXTRACTED FROM LAYOUT | N/A | N/A | N/A | N/A | N/A | N/A | N/A | N/A |
8 | All Diodes | dXXXX n1 n2 area pj | licon | diff | licon/mcon/vias | poly/li/m1/m2-m3 | licon-negligible | Junction | li/m1/m2-m3 | none |
9 | RF ESD Diodes | xesd_XXXX n1 n2 area pj | licon/mcon/ via | li/m1/m2 | via2 | m3 | none | li/m1/m2 | m3 | none |
10 | Parasitic PNP | qXXXX nc nb ne ns pnppar m | licon/mcon | diff/li | mcon/vias | li/m1/m2-m3 | li/mcon-neglible | na | li/m1/m2-m3 | none |
11 | Parasitic PNP (5X) | qXXXX nc nb ne ns pnppar5x m | licon/mcon | diff/li | mcon/vias | li/m1/m2-m3 | li/mcon-neglible | na | li/m1/m2-m3 | none |
12 | Parasitic NPN | qXXXX nc nb ne ns npnpar m | licon/mcon | diff/li | mcon/vias | li/m1/m2-m3 | li/mcon-neglible | na | li/m1/m2-m3 | none |
13 | Non-precision Resistors | rXXXX a b l w m | none | sheet layer | licon/mcon/vias | none (no sheet resistance where sheet layer & res id layer intersect) | none | none | junction/li/m1/m2-m3 | parasitic capacitance to substrate (tool limitation) |
14 | Precision poly resistor | xXXXXX hrpoly_X_X r0 r1 b l w m | licon/mcon | poly/li | via | m1/m2-m3 | none | poly-sub | m1/m2-m3 | li-negligible |
15 | MIM Capacitor (2-terminal) | xXXXX xcmimc2 c0 c1 w l m | via2 | m3 | N/A | poly/li/m1/m2 | m2 (of the device) -negligible | capm-m2 | li/m1/m2-m3 | routing layers underneath device |
16 | MIM Capacitor (3-terminal) | xXXXX xcmimc c0 c1 b w l m | via2 | m3 | N/A | poly/li/m1/m2 | m2 (of the device) -negligible | m2-sub/capm-m2 | (1) Carea of M2-sub (non-overlap CAPM w/ 0.14um upsize)\n(2) M3 Cap by 1 snap grid width | none |
17 | Isolated Pwell Resistor | xXXXX pwres r0 r1 b l w m | licon/mcon | pwell/li | vias | m1/m2-m3 | none | none | junction/m1/m2-m3 | li-negligible |
18 | Vertical Parallel Plate Cap | xXXXX xcmvpp c0 c1 b m (note: no special RCX implementation for VPP required since black-box LVS will be used) | mcon/via | li/m1/m2 | none (black box LVS) | none (black box LVS) | none | li/mcon//m1/via/m2 | none (black box LVS) | Parasitic capacitance to routing above |
19 | Vertical Parallel Plate Cap over MOSCAP | xXXXX xcmvpp2_* c0 c1 b m | mcon/via | li/m1/m2 | none (black box LVS) | none (black box LVS) | none | li/mcon//m1/via/m2 | none (black box LVS) | Parasitic capacitance to routing above |
20 | 4-terminal Vertical Parallel Plate Cap (M3 Shielded) | xXXXXX xcmvpp*x*_m3shield c0 c1 b term4 m= | licon/mcon/ via | poly/li/m1/m2 | via3/via4 | m3/m4/m5 | none | poly/licon/li/mcon/m1/via/m2/m3 | m3-substrate (not m3-m2), neighboring metal to VPP metal | none |
21 | 4-terminal Vertical Parallel Plate Cap (M5 Shielded) | xXXXXX xcmvpp*_*m5shield c0 c1 b term4 m= | licon/mcon/ via/via2/via3 | poly/li/m1/m2/m3/m4 | via4 | m5 | none | poly/licon/li/mcon/m1/via/m2/m3/m4/m5 | neighboring metal to VPP metal | none |
22 | 3-terminal Vertical Parallel Plate Cap | xXXXXX xcmvpp*x* c0 c1 b m=\nxXXXXX xcmvpp*x*_lishield c0 c1 b m= | mcon/ via | li/m1/m2 | via2/via3/via4 | m3/m4/m5 | none | li/mcon/m1/via/m2 | neighboring metal to VPP metal | Parasitic capacitance to routing above |
23 | 3-terminal Vertical Parallel Plate Cap (for S8Q/S8P only) | xXXXXX xcmvpp*x*_m3_lishield c0 c1 b m= | mcon/ via/via2 | li/m1/m2/m3 | via3/via4 | m4/m5 | none | li/mcon/m1/via/m2/via2/m3 | neighboring metal to VPP metal | none |
24 | Varactor | xXXXXX xcnwvc c0 c1 b l w m | licon/mcon/via | diff/poly/li/m1/m2 | via2 | m3 | none | poly/li/m1/m2 | nwdiodemodel/m3* | none |
25 | Inductor | xXXXXX xindXXXX t1 t2 body (note: no special RCX implementation for inductor required since black-box LVS will be used) | via | m2/Cu | Nothing extracted within inductor.dg layer | none | m2/via/Cu | Nothing extracted within inductor.dg layer | none |