1.5 KiB
1.5 KiB
| 1 | Name | Description | Flags | Value | Unit |
|---|---|---|---|---|---|
| 2 | (vhvi.vhv.1) | Terminals operating at nominal 12V (maximum 16V) bias must be tagged as Very-High-Voltage (VHV) using vhvi:dg layer | NC | ||
| 3 | (vhvi.vhv.2) | A source or drain of a drain-extended device can be tagged by vhvi:dg. A device with either source or drain (not both) tagged with vhvi:dg serves as a VHV propagation stopper | NC | ||
| 4 | (vhvi.vhv.3) | Any feature connected to VHVSourceDrain becomes a very-high-voltage feature | NC | ||
| 5 | (vhvi.vhv.4) | Any feature connected to VHVPoly becomes a very-high-voltage feature | NC | ||
| 6 | (vhvi.vhv.5) | Diffusion that is not a part of a drain-extended device (i.e., diff not areaid:en) must not be on the same net as VHVSourceDrain. Only diffusion inside :drc_tag:`areaid.ed` and LV diffusion tagged with vhvi:dg are exempted. | |||
| 7 | (vhvi.vhv.6) | Poly resistor can act as a VHV propagation stopper. For this, it should be tagged with text "vhv_block" | NC | ||
| 8 | (vhvi.1.-) | Min width of vhvi:dg | 0.020 | µm | |
| 9 | (vhvi.2.-) | Vhvi:dg cannot overlap areaid:ce | |||
| 10 | (vhvi.3.-) | VHVGate must overlap hvi:dg | |||
| 11 | (vhvi.4.-) | Poly connected to the same net as a VHVSourceDrain must be tagged with vhvi:dg layer | |||
| 12 | (vhvi.5.-) | Vhvi:dg cannot straddle VHVSourceDrain | |||
| 13 | (vhvi.6.-) | Vhvi:dg overlapping VHVSourceDrain must not overlap poly | |||
| 14 | (vhvi.7.-) | Vhvi:dg cannot straddle VHVPoly | |||
| 15 | (vhvi.8.-) | Min space between nwell tagged with vhvi:dg and deep nwell, nwell, or n+diff on a separate net (except for n+diff overlapping nwell tagged with vhvi:dg). | 11.240 | µm |