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skywater-pdk/docs/rules/device-details/nfet_03v3_nvt/index.rst

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docs: Renaming so docs match `sky130_fd_pr` cell names. * Make the directory names consistent with cell names. * Add `:model:` and `:cell:` around object names. * Small other cleanups. Signed-off-by: Tim 'mithro' Ansell <me@mith.ro>
2020-09-28 15:08:32 -05:00
3.0V native NMOS FET
--------------------
Spice Model Information
~~~~~~~~~~~~~~~~~~~~~~~
- Cell Name: :cell:`sky130_fd_pr__nfet_01v8`
- Model Name: :model:`sky130_fd_pr__nfet_03v3_nvt`
Operating Voltages where SPICE models are valid for :model:`sky130_fd_pr__nfet_03v3_nvt`
Subscript and equation formatting changed to math.
2020-11-09 15:14:25 -06:00
- :math:`V_{DS} = 0` to 3.3V
- :math:`V_{GS} = 0` to 3.3V
- :math:`V_{BS} = 0` to -3.3V
docs: Renaming so docs match `sky130_fd_pr` cell names. * Make the directory names consistent with cell names. * Add `:model:` and `:cell:` around object names. * Small other cleanups. Signed-off-by: Tim 'mithro' Ansell <me@mith.ro>
2020-09-28 15:08:32 -05:00
Details
~~~~~~~
The native device is constructed by blocking out all VT implants.
The model and EDR (e-test) parameters are compared below. Note that the minimum gate length for 3V operation is 0.5 µm.
.. include:: ../nfet_03v3_nvt-and-nfet_05v0_nvt/nfet_03v3_nvt-and-nfet_05v0_nvt-table0.rst
The symbols for the :model:`sky130_fd_pr__nfet_03v3_nvt` devices are shown below.
|symbol-nfet_0v3v3_nvt|
The cross-section of the native devices is shown below.
|cross-section-nfet_03v3_nvt|
.. |symbol-nfet_0v3v3_nvt| image:: symbol-nfet_03v3_nvt.svg
.. |cross-section-nfet_03v3_nvt| image:: ../nfet_03v3_nvt-and-nfet_05v0_nvt/cross-section-nfet_03v3_nvt-and-nfet_05v0_nvt.svg
.. note:: The only differences between the :model:`sky130_fd_pr__nfet_03v3_nvt` and :model:`sky130_fd_pr__nfet_05v0_nvt` devices are the minimum gate length and the VDS requirements.