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skywater-pdk/docs/rules/device-details/pnp_05v0/pnp_05v0-table0.rst

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docs: Adding details for various supported devices. Each type of device includes; - General device description - Details about the spice model and operating conditions. - Images of the symbols for the device. - Image showing the cross-section of the device. The devices included are; - Bipolar (NPN) - Bipolar (PNP) - MiM Capacitor - Vertical Parallel Plate (VPP) capacitors - SONOS cells - SRAM cells - Diodes - 11V/16V NMOS FET - 1.8V NMOS FET - 1.8V low-VT NMOS FET - 20V NMOS FET - 20V isolated NMOS FET - 20V native NMOS FET - 20V NMOS zero-VT FET - 3.0V and 5.0V native NMOS FET - 5.0V/10.5V NMOS FET - NMOS ESD FET - 10V/16V PMOS FET - 1.8V PMOS FET - 1.8V high-VT PMOS FET - 1.8V low-VT PMOS FET - 20V PMOS FET - 5.0V/10.5V PMOS FET - Generic Resistors - P- poly precision resistors - P+ poly precision resistors - Varactors Signed-off-by: Tim 'mithro' Ansell <me@mith.ro> Temp.
2020-07-27 15:38:57 -05:00
.. list-table::
:header-rows: 1
:stub-columns: 1
* - Parameter
- NOM
- LSL
- USL
- Units
- Description
* - BF0P68\_0P5
- 14.29
- 7.51
- 21.02
-
docs: Renaming so docs match `sky130_fd_pr` cell names. * Make the directory names consistent with cell names. * Add `:model:` and `:cell:` around object names. * Small other cleanups. Signed-off-by: Tim 'mithro' Ansell <me@mith.ro>
2020-09-28 15:08:32 -05:00
- PNP forward current gain (I\ :sub:`C`/I\ :sub:`B`) at I\ :sub:`E`\ =0.5 µA
docs: Adding details for various supported devices. Each type of device includes; - General device description - Details about the spice model and operating conditions. - Images of the symbols for the device. - Image showing the cross-section of the device. The devices included are; - Bipolar (NPN) - Bipolar (PNP) - MiM Capacitor - Vertical Parallel Plate (VPP) capacitors - SONOS cells - SRAM cells - Diodes - 11V/16V NMOS FET - 1.8V NMOS FET - 1.8V low-VT NMOS FET - 20V NMOS FET - 20V isolated NMOS FET - 20V native NMOS FET - 20V NMOS zero-VT FET - 3.0V and 5.0V native NMOS FET - 5.0V/10.5V NMOS FET - NMOS ESD FET - 10V/16V PMOS FET - 1.8V PMOS FET - 1.8V high-VT PMOS FET - 1.8V low-VT PMOS FET - 20V PMOS FET - 5.0V/10.5V PMOS FET - Generic Resistors - P- poly precision resistors - P+ poly precision resistors - Varactors Signed-off-by: Tim 'mithro' Ansell <me@mith.ro> Temp.
2020-07-27 15:38:57 -05:00
* - BF0P68\_5
- 12.58
- 6.59
- 18.59
-
docs: Renaming so docs match `sky130_fd_pr` cell names. * Make the directory names consistent with cell names. * Add `:model:` and `:cell:` around object names. * Small other cleanups. Signed-off-by: Tim 'mithro' Ansell <me@mith.ro>
2020-09-28 15:08:32 -05:00
- PNP forward current gain (I\ :sub:`C`/I\ :sub:`B`) at I\ :sub:`E`\ =5.0 µA
docs: Adding details for various supported devices. Each type of device includes; - General device description - Details about the spice model and operating conditions. - Images of the symbols for the device. - Image showing the cross-section of the device. The devices included are; - Bipolar (NPN) - Bipolar (PNP) - MiM Capacitor - Vertical Parallel Plate (VPP) capacitors - SONOS cells - SRAM cells - Diodes - 11V/16V NMOS FET - 1.8V NMOS FET - 1.8V low-VT NMOS FET - 20V NMOS FET - 20V isolated NMOS FET - 20V native NMOS FET - 20V NMOS zero-VT FET - 3.0V and 5.0V native NMOS FET - 5.0V/10.5V NMOS FET - NMOS ESD FET - 10V/16V PMOS FET - 1.8V PMOS FET - 1.8V high-VT PMOS FET - 1.8V low-VT PMOS FET - 20V PMOS FET - 5.0V/10.5V PMOS FET - Generic Resistors - P- poly precision resistors - P+ poly precision resistors - Varactors Signed-off-by: Tim 'mithro' Ansell <me@mith.ro> Temp.
2020-07-27 15:38:57 -05:00
* - VBE0P68\_0P5
- 0.7180
- 0.7120
- 0.7240
- V
- PNP emitter-base voltage at I\ :sub:`E`\ =0.5 µA
* - VBE0P68\_5
- 0.7847
- 0.7790
- 0.7904
- V
- PNP emitter-base voltage at I\ :sub:`E`\ =5.0 µA
* - BF3P4\_0P1
- 13.20
- 5.93
- 20.20
-
docs: Renaming so docs match `sky130_fd_pr` cell names. * Make the directory names consistent with cell names. * Add `:model:` and `:cell:` around object names. * Small other cleanups. Signed-off-by: Tim 'mithro' Ansell <me@mith.ro>
2020-09-28 15:08:32 -05:00
- PNP forward current gain (I\ :sub:`C`/I\ :sub:`B`) at I\ :sub:`E`\ =0.1 µA
docs: Adding details for various supported devices. Each type of device includes; - General device description - Details about the spice model and operating conditions. - Images of the symbols for the device. - Image showing the cross-section of the device. The devices included are; - Bipolar (NPN) - Bipolar (PNP) - MiM Capacitor - Vertical Parallel Plate (VPP) capacitors - SONOS cells - SRAM cells - Diodes - 11V/16V NMOS FET - 1.8V NMOS FET - 1.8V low-VT NMOS FET - 20V NMOS FET - 20V isolated NMOS FET - 20V native NMOS FET - 20V NMOS zero-VT FET - 3.0V and 5.0V native NMOS FET - 5.0V/10.5V NMOS FET - NMOS ESD FET - 10V/16V PMOS FET - 1.8V PMOS FET - 1.8V high-VT PMOS FET - 1.8V low-VT PMOS FET - 20V PMOS FET - 5.0V/10.5V PMOS FET - Generic Resistors - P- poly precision resistors - P+ poly precision resistors - Varactors Signed-off-by: Tim 'mithro' Ansell <me@mith.ro> Temp.
2020-07-27 15:38:57 -05:00
* - BF3P4\_10
- 14.65
- 6.10
- 23.10
-
docs: Renaming so docs match `sky130_fd_pr` cell names. * Make the directory names consistent with cell names. * Add `:model:` and `:cell:` around object names. * Small other cleanups. Signed-off-by: Tim 'mithro' Ansell <me@mith.ro>
2020-09-28 15:08:32 -05:00
- PNP forward current gain (I\ :sub:`C`/I\ :sub:`B`) at I\ :sub:`E`\ =1.0 µA
docs: Adding details for various supported devices. Each type of device includes; - General device description - Details about the spice model and operating conditions. - Images of the symbols for the device. - Image showing the cross-section of the device. The devices included are; - Bipolar (NPN) - Bipolar (PNP) - MiM Capacitor - Vertical Parallel Plate (VPP) capacitors - SONOS cells - SRAM cells - Diodes - 11V/16V NMOS FET - 1.8V NMOS FET - 1.8V low-VT NMOS FET - 20V NMOS FET - 20V isolated NMOS FET - 20V native NMOS FET - 20V NMOS zero-VT FET - 3.0V and 5.0V native NMOS FET - 5.0V/10.5V NMOS FET - NMOS ESD FET - 10V/16V PMOS FET - 1.8V PMOS FET - 1.8V high-VT PMOS FET - 1.8V low-VT PMOS FET - 20V PMOS FET - 5.0V/10.5V PMOS FET - Generic Resistors - P- poly precision resistors - P+ poly precision resistors - Varactors Signed-off-by: Tim 'mithro' Ansell <me@mith.ro> Temp.
2020-07-27 15:38:57 -05:00
* - VBE3P4\_0P1
- 0.6129
- 0.6087
- 0.6172
- V
- PNP emitter-base voltage at I\ :sub:`E`\ =0.1 µA
* - VBE3P4\_10
- 0.7351
- 0.7308
- 0.7393
- V
- PNP emitter-base voltage at I\ :sub:`E`\ =1.0 µA