Name,Defining algorithm,,,Used in …
AR_met2_A,Net Area Ratio of met2 not connected to via  and of via2 >=0.05  [Equation: (AREA(via2))/(2 * AREA(met2NotConnVia) + PERIMETER(met2NotConnVia) * 0.35)],,,Rules
AR_met2_B,"Net Area Ratio of met2GroundOrFloat, via, and via2 <=0.032 [Equation: (AREA(via2))/(2 * AREA(met2GroundOrFloatVia) + PERIMETER(met2GroundOrFloatVia) * 0.35)]",,,Rules
bondPad,pad:dg OUTSIDE areaid:ft,,,Rules
bottom_plate,(capm:dg AND met2:dg) sized by capm.3; Exclude all capm sharing same metal2 plate,,,Rules
Capacitor,Capm enclosing at least one via2,,,Rules
Chip_extent,Holes (areaid:sl ) OR areaid.sl,,,Rules
Diecut_pmm,areaid.dt NOT (cfom.wp OR cp1m.wp OR cmm1.wp OR cmm2.wp),,,Rules
drain_diffusion,(diff NOT poly in nwell or  pwell) not abutting tap in the same well or abutting tap in the opposite well,,,Rules
dummy_capacitor,Capm not overlapping via2,,,Rules
dummy_poly,"poly overlapping text ""dummy_poly"" (written using text.dg)",,,Rules
ESD_nwell_tap,"n+ tap coincident with nwell such that n+ tap and nwell are completely surrounded by and abutting n+ diff on all edges, within areaid:ed   ",,,Rules
fomDmy_keepout_1, (diff.dg OR tap.dg OR poly.dg OR pwell resistor OR pad OR cfom.dg OR cfom.mk OR PhotoArray OR cp1m.mk),,,Rules
floating_met*,met*.dg not connected to diffusion or tap through met(*+1) or met(*-1) and their respecitve vias and contacts,,,Rules
fom_waffles,"fom.mk with dimensions (um x um): 0.5 x 0.5, 1.5 x 1.5, 2.5 x 2.5 and 4.08 x 4.08",,,Rules
gated_npn,cell name:  s8rf_npn_1x1_2p0_HV,,,Rules
huge_metX,Metal X geometry wider and longer than 3.000um,,,Rules
hugePad,pad.mk with width > 100um,,,Rules
iso_pwell,(NOT nwell) AND dnwell,,,Rules
isolated_tap,tap that does not abut diff,,,Rules
laser_target,cell *lazX_* and *lazY_* OUTSIDE areaid:ft,,,Rules
LVnwell,nwell NOT hvi,,,Rules
LVTN_Gate,Gate overlapping  lvtn,,,Rules
met2GroundOrFloat,met2 connected to ptap or met2 not connected to difftap\n,,,Rules
met2GroundOrFloatVia,met2GroundOrFloat interacting with via2 >2,,,Rules
N+_diff,Diff NOT  Nwell,,,Rules
N+_tap,Tap AND Nwell,,,Rules
nsdmHoles,Hole( nsdm ),,,Rules
NSM_keepout,nsm.dg OR nsm.mk,,,Rules
nwell_all,nwell OR extension of cnwm beyond  nwell edge straddling de_nFet_source by cnwm.3f (45 degree edges are retained for the NVHV device nwell);  Rule cnwm.3f applies only to GSMC flows,,,Rules
P+_diff,Diff AND Nwell,,,Rules
P+_tap,Tap NOT  Nwell,,,Rules
Pattern_density,(diff_tap area) / PD window (as specified in the rule section),,,Rules
photoDiode,deep nwell overlapping areaid.po. Die+frame utility will use the mask data of dnwell in the implementation of this definition,,,Rules
poly_licon1,Any licon1 that does not overlap ((diff or tap) NOT  poly),,,Rules
poly_waffles,"p1m.mk with dimensions (um x um): 0.48 x 0.48, 0.54 x 0.54 and 0.72 x 0.72",,,Rules
prec_resistor,rpm AND (poly overlapping poly.rs) AND psdm,,,Rules
prec_resistor_terminal,prec_resistor AND li,,,Rules
psdmHoles,Hole( psdm ),,,Rules
pwell,NOT nwell (default substrate area),,,Rules
pwres_terminal,P+tap abutting pwell.rs,,,Rules
pnp_emitter,diff AND pnp.dg AND psdm,,,Rules
routing_terminal,metX.pin sized inside of metX.drawing by 1/2 * metalX min width; Similar defintion applies to Li1 layer,,,Rules
scribe_line,areaid:ft NOT areaid:dt,,,Rules
slotted_licon,licon1.dg of size 0.19um x 2.0um,,,Rules
slotted_licon_edge1,2.0um edge of the slotted_licon,,,Rules
source_diffusion,(diff NOT  poly in nwell or  pwell) abutting tap in same well,,,Rules
tap_licon,Tap AND Licon1,,,Rules
tap_notPoly,tap NOT  poly,,,Rules
top_indmMetal,met3 for S8D*,,,Rules
top_metal,met3.dg OR mm3.mk (for S8T*/SP8TEE-5R); met3.dg OR indm.mk (for S8D*); met4.dg OR mm4.mk  (for SP8Q/S8Q*); met5.dg OR mm5.mk  (for SP8P*/S8P*),,,Rules
top_padVia,Via2 for S8D*,,,Rules
top_plate,capm:dg,,,Rules
Var_channel,poly AND tap AND (nwell NOT hvi) NOT areaid.ce,,,Rules
VaracTap,Tap overlapping Var_channel,,,Rules
vpp_with_noLi,vpp with cell names:  FIXME,,,Rules
vpp_with_Met3Shield,vpp with cell names: FIXME,,,Rules
vpp_with_LiShield,vpp with cell names: FIXME,,,Rules
vpp_over_MOSCAP,"vpp with cell names: FIXME when over nhvnative W/L=10x4, FIXME when over phv/pshort/phighvt/plowvt W/L=5x4",,,Rules
vpp_with_Met5PolyShield,vpp with cell names: FIXME,,,Rules
vpp_with_Met5,vpp with cell names: FIXME,,,Rules
cp1m_HV,cp1m AND Hvi,,,Rules (HV)
de_nFet_drain,((isolated tap) AND areaid.en) overlapping nwell,,,Rules (HV)
de_nFET_gate,deFET_gate overlapping (diff NOT dnwell),,,Rules (HV)
de_nFet_source,(diff AND areaid.en) overlapping de_nFET_gate,,,Rules (HV)
de_pFet_drain,((isolated tap) AND areaid.en) not overlapping nwell,,,Rules (HV)
de_pFET_gate,deFET_gate overlapping (diff AND dnwell),,,Rules (HV)
de_pFet_source,(diff AND areaid.en) overlapping de_pFET_gate,,,Rules (HV)
deFET_gate,"(poly AND areaid.en) not overlapping pwm ; For CAD flows that do not have pwm layer, it is (poly AND areaid.en)",,,Rules (HV)
Hdiff,Diffusion AND Hvi,,,Rules (HV)
Hgate,Hpoly AND diff,,,Rules (HV)
Hnwell,Nwell AND Hvi,,,Rules (HV)
Hpoly,Poly AND Hvi,,,Rules (HV)
Htap,Tap AND  Hvi,,,Rules (HV)
hv_source/drain,= (diff andNot poly) that overlaps diff.hv,,,Rules (HV)
hvFET_gate,= FET_gate butting hv_source/drain,,,Rules (HV)
hvPoly,= poly electrically connected to hv_source/drain,,,Rules (HV)
HV_nwell,(nwell AND hvi) OR (nwell overlapping areaid.hl),,,Rules (HV)
stack_hv_lv_diff,(diff And Hvi NOT  nwell) abutting (diff NOT  nwell),,,Rules (HV)
SHVdiff,Diff And shvi,,,Rules (SHV)
SHVGate,SHVPoly AND diff,,,Rules (SHV)
SHVPoly,Poly OVERLAP shvi:dg,,,Rules (SHV)
SHVSourceDrain,Diff And shvi NOT poly NOT diff:rs,,,Rules (SHV)
VHVdiff,Diff And vhvi,,,Rules (VHV)
VHVGate,VHVPoly AND diff,,,Rules (VHV)
VHVPoly,Poly OVERLAP vhvi:dg,,,Rules (VHV)
VHVSourceDrain,(Diff AND tap) And vhvi NOT poly NOT diff:rs,,,Rules (VHV)
background,"Area where waffling grid is defined, sized to avoid waffle shift between runs",,,Waffles
die,Holes (areaid:sl ),,,Waffles
frame,( areaid.ft SIZE by -(max of s.2e/h)) NOT (OR areaid.dt SEALIDandHole),,,Waffles
inductor_metal,(inductor:dg AND (met1 OR met2 OR met3)) size by 10 um [For all flows except S8PIR-10R]\ninductor.dg [for the S8PIR-10R flow],,,Waffles
mm*_slot,mm* slots are defined as empty holes in metal that are located in (areaid.cr OR areaid.cd),,,Waffles
nwellDnwellHoles,(inner HOLES of nwellAndDnwell). Die+frame utility will use the mask data of nwell and dnwell in the implementation of this definition,,,Waffles
photoArray,(OR nwellAndDnwell nwellDnwellHoles) enclosing photoDiode. Die+frame utility will use the mask data of nwell and dnwell in the implementation of this definition,,,Waffles
gate,poly AND diff,,,"pfet, nfet (LVS)"
nfet,Gate NOT  nwell,,,"pfet, nfet (LVS)"
pfet,Gate AND nwell,,,"pfet, nfet (LVS)"
nDiode,Ndiff AND DiodeID,,,Diodes (LVS)
Pdiff,diff AND nwell,,,Diodes (LVS)
pDiode,Pdiff AND DiodeID,,,Diodes (LVS)
diff_hole,Hole( diff ),,,ESD (LVS)
diff_tap_nwell,tap_nwell INSIDE diff_hole,,,ESD (LVS)
esd_diff_tap_nwell,ESDID AND diff_tap_nwell,,,ESD (LVS)
Ndiff,diff NOT nwell,,,ESD (LVS)
tap_nwell,tap INSIDE nwell,,,ESD (LVS)
ESD_diffusion,A+B31ny diffusion or ESD_nwell_tap  connected directly or through a resistor to a Pad or to Vss/Vcc that is covered by areaid.ed and located within a double tap guardrings.,,,Latch up rules
ESD_cascode_diffusion,Diffusion covered by areaid.ed between two minimum spaced poly gates and located within a pair of double tap guardrings. (There should be no licons on the diffusion.),,,Latch up rules
ESD_diode,Any nwell (other than ESD_nwell_tap ) covered by areaid.ed and areaid.de that does not contain poly,,,Latch up rules
ESD_FET,(any Pdiff covered by areaid:ed within a double tap guardrings) Or\nESD_NFET,,,Latch up rules
ESD_NFET,(any Ndiff covered by areaid:ed abutting ESD_nwell_tap) Or (any Ndiff covered by areaid:ed abutting gate within 3.5um of ESD_nwell_tap) Or (any Ndiff abutting ESD_nwell_tap within areaid.ed) a double tap guardrings,,,Latch up rules
I/O_or_Output_Pmos,ESD P+ diffusion overlapping poly and overlapping ESD source/drain diffusion connected to I/O or output net,,,Latch up rules
I/O_Pmos_w/series_R,ESD PMOS connected to I/O or output net through series resistors,,,Latch up rules
met_ESD_resistor,Metal resistor inside areaid:ed,,,Latch up rules
Non_Vcc_nwell,Any nwell connected to any bias other than power supply,,,Latch up rules
Nwell_area,Is determined using the following steps:\n(a) Grow pdiff by 1.5 mm\n(b) Merge\n(c) And Nwell:dg,,,Latch up rules
Pwell_area,Is determined using the following steps:\n(a) Grow ndiff by 1.5 mm\n(b) Merge\n(c) NOT  Nwell:dg,,,Latch up rules
Series_transistors,Merged diffusion determined by Nwell_area and Pwell_area,,,Latch up rules
fuse:dg,"met2:fe for S8D*/S8TM*, met3.fe for S8TEE*/S8TNV/S8Q*/SP8TEE-5R/SP8Q*, met4.fe for S8P*/SP8P*",,,Fuse rules
fuse_contact,(fuse_metal overlapping fuse:dg) NOT fuse:dg,,,Fuse rules
fuse_metal,"met3 for S8TEE*/S8TNV/S8Q*/SP8TEE-5R/SP8Q*; met2 for S8D*/S8TM*, met4 for S8P*/SP8P*",,,Fuse rules
fuse_shield,"Metal line (same metal level as fuse) between fuse and periphery, not overlapping contacts or vias, with specified dimensions",,,Fuse rules
non-isolated fuse edge,Long edge of the fuse spaced to Met2/Met3/Met4  less than a specified amount,,,Fuse rules
single_fuses,Fuses without neighboring fuses within specified distance,,,Fuse rules