Layer / Design rule,CD,,space,,Comment MOSFET width,0.135,,,,FOMSE MOSFET width in standard cells,0.075,,,,FOMSESC Spacing of poly on field to diff,,,0.065,,PFDSE Spacing of poly on field to tap,,,0.005,,PFTSE Enclosure of tap by nwell for pwell res,,,0.22,,PTAP_NWL_SP Grid conversion rounding factor,,,0.005,,GRCF Licon enclosure rounding,,,0.02,,LICENCLR LI1CD add/drop,0.01,,0.04,, Huge metal X min. W and L,3,,,,HugeM Min Nsdm area ,0.265,,,,MinNsdmArea Min Psdm area,0.255,,,,MinPsdmArea Min N/Psdm hole area ,0.265,,,,MinNPsdmHole Large waffle size must be divisible by 4,7.2,,,,waffle_large P1M additional CD control,0.011,,,,P1MCDcontrol Li1 proximity correction,,,0.25,,LI1PROXSpace "Serif added to nwell convex corner (SXX-572, 573)",0.22,,,,NwellCvxSerif "Serif added to nwell concave corner (SXX-572, 573)",0.12,,,,NwellCveSerif NWM extension beyond nwell edge straddling de_nFet_source (for GSMC; QZM-133),0.075,,,,NvhvNwellExt Min enclosure of pad by pmm for Cu inductor (JNET-80) ,0,,,,padPMMEncInd Min enclosure of pmm by cu1m for Cu inductor (JNET-80) ,10.75,,,,pmmCu1mEncInd Min enclosure of pbo by cu1m per DECA 000348 Rev S,10,,,,pboCu1mEnc Min enclosure of pmm by pmm2 for radio flow in the die (JNET-80) ,13,,,,pmmPmm2EncInd Min enclosure of pmm by pmm2 inside frame,7.5,,,,pmmPmm2EncIndFrame Min space between pmm2 and Inductor.dg ,,,7.5,,pmm2IndSpc Min cu1m PD across full chip,0.35,,,,MinCU1Mpd Max cu1m PD across full chip,0.45,,,,MaxCU1Mpd Spacing between RDL and outer edge of seal ring,15,,,,RdlSealSpc Spacing between RDL and pmm2,6.16,,,,RdlPmm2Spc Enclosure of etest module in die by cpmm2,0,,,,EtestCpmm2Enc "Keepout of active, poly, li and metal to NSM (TCS-2253)",,,1,,NSMKeepout "3 um keepout of active, poly, li and metal to areaid.dt/areaid.ft (TCS-2253)",,,3,,NSMKeepout_3um pnp_emitter sizing (S8P GSMC flow),,,0.05,,PnpEmitterSzGSMC pnp_emitter sizing (other flows),,,0.03,,PnpEmitterSz MiM Capacitor aspect ration,20,,,,MiM_AR Min NCM space to be used to preserve NCM CL algorithm (avoid LVL error),,,1.27,,NCM_0LVL Min space of NCM between core and periphery due to existing layout restriction,,,0.96,,NcmCorePeriSP Multiplication factor,,,0.01,,S8LVconv Minimum scribe width,50,,,,scribew spacing of p-well outside deep n-well to deep n-well mask edge,,,0.12,,NWDNWENCL p-well in deep n-well to p-sub,,,1.2,,NWDNWOL Field oxide etchback after P1ME before implants,,,0.04,,WFDEL