device section name consistency fixes

This commit is contained in:
Stefan Biereigel 2022-10-31 22:54:16 +01:00
parent d1d38dffee
commit 995acd5dfa
9 changed files with 60 additions and 60 deletions

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@ -29,9 +29,9 @@ device_list = [
# 20V MOS
"nfet_20v0",
"nfet_20v0_iso",
"nfet_20v0_nvt",
"nfet_20v0_zvt",
"nfet_20v0_iso",
"pfet_20v0",
# ESD MOS

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@ -216,7 +216,7 @@ The cross-section of the high-VT PMOS FET is shown below. The cross-section is i
.. |cross-section-pfet_01v8_hvt| image:: device-details/pfet_01v8_hvt/cross-section-pfet_01v8_hvt.svg
1.8V Accumulation-Mode MOS Varactors
1.8V accumulation-mode MOS varactors
------------------------------------
Spice Model Information
@ -545,45 +545,6 @@ The cross-section of the 20V NMOS FET is shown below.
.. |cross-section-nfet_20v0| image:: device-details/nfet_20v0/cross-section-nfet_20v0.svg
20V isolated NMOS FET
---------------------
Spice Model Information
~~~~~~~~~~~~~~~~~~~~~~~
- Cell Name: :cell:`sky130_fd_pr__nfet_extenddrain`
- Model Name: :model:`sky130_fd_pr__nfet_20v0_iso`
Operating Voltages where SPICE models are valid, subject to SOA limitations:
- :math:`V_{DS} = 0` to +22V
- :math:`V_{GS} = 0` to 5.5V
- :math:`V_{BS} = 0` to -2.0V
Details
~~~~~~~
The 20V isolated NMOS FET has the same construction as the 20V NMOS FET, but is built over a Deep N-well. This permits the p-well to be isolated from the substrate and permit “high-side” usage (where the PW body is held above ground).
Major model output parameters are shown below and compared against the EDR (e-test) specs
.. include:: device-details/nfet_20v0_iso/nfet_20v0_iso-table0.rst
The symbol of the :model:`sky130_fd_pr__nfet_20v0_iso` (20V isolated NMOS FET) is shown below.
|symbol-nfet_20v0_iso|
The cross-section of the 20V isolated NMOS FET is shown below.
|cross-section-nfet_20v0_iso|
.. |symbol-nfet_20v0_iso| image:: device-details/nfet_20v0_iso/symbol-nfet_20v0_iso.svg
.. |cross-section-nfet_20v0_iso| image:: device-details/nfet_20v0_iso/cross-section-nfet_20v0_iso.svg
20V native NMOS FET
-------------------
@ -623,7 +584,7 @@ The cross-section of the 20V native NMOS FET is shown below.
.. |cross-section-nfet_20v0_nvt| image:: device-details/nfet_20v0_nvt/cross-section-nfet_20v0_nvt.svg
20V NMOS zero-VT FET
20V zero-VT NMOS FET
--------------------
Spice Model Information
@ -659,6 +620,45 @@ The cross-section of the 20V NMOS zero-VT FET is shown below.
.. |cross-section-nfet_20v0_zvt| image:: device-details/nfet_20v0_zvt/cross-section-nfet_20v0_zvt.svg
20V isolated NMOS FET
---------------------
Spice Model Information
~~~~~~~~~~~~~~~~~~~~~~~
- Cell Name: :cell:`sky130_fd_pr__nfet_extenddrain`
- Model Name: :model:`sky130_fd_pr__nfet_20v0_iso`
Operating Voltages where SPICE models are valid, subject to SOA limitations:
- :math:`V_{DS} = 0` to +22V
- :math:`V_{GS} = 0` to 5.5V
- :math:`V_{BS} = 0` to -2.0V
Details
~~~~~~~
The 20V isolated NMOS FET has the same construction as the 20V NMOS FET, but is built over a Deep N-well. This permits the p-well to be isolated from the substrate and permit “high-side” usage (where the PW body is held above ground).
Major model output parameters are shown below and compared against the EDR (e-test) specs
.. include:: device-details/nfet_20v0_iso/nfet_20v0_iso-table0.rst
The symbol of the :model:`sky130_fd_pr__nfet_20v0_iso` (20V isolated NMOS FET) is shown below.
|symbol-nfet_20v0_iso|
The cross-section of the 20V isolated NMOS FET is shown below.
|cross-section-nfet_20v0_iso|
.. |symbol-nfet_20v0_iso| image:: device-details/nfet_20v0_iso/symbol-nfet_20v0_iso.svg
.. |cross-section-nfet_20v0_iso| image:: device-details/nfet_20v0_iso/cross-section-nfet_20v0_iso.svg
20V PMOS FET
------------
@ -703,7 +703,7 @@ The cross-section of the 20V PMOS FET is shown below.
.. |cross-section-pfet_20v0| image:: device-details/pfet_20v0/cross-section-pfet_20v0.svg
NMOS ESD FET
ESD NMOS FET
------------
Spice Model Information
@ -809,8 +809,8 @@ Symbols for the diodes are shown below
.. |symbol-diode-17| image:: device-details/diodes/symbol-diode-17.svg
Bipolar (NPN)
-------------
Bipolar NPN transistor
----------------------
Spice Model Information
~~~~~~~~~~~~~~~~~~~~~~~
@ -861,8 +861,8 @@ The cross-section of the :model:`sky130_fd_pr__npn_11v0` is shown below. The pol
.. |cross-section-npn_11v0| image:: device-details/npn_05v0/cross-section-npn_11v0.svg
Bipolar (PNP)
-------------
Bipolar PNP transistor
----------------------
Spice Model Information
~~~~~~~~~~~~~~~~~~~~~~~
@ -1022,7 +1022,7 @@ The cross-section of the 2-T SONOS cell is shown below.
.. |cross-section-sonos-cell| image:: device-details/special_sonosfet/cross-section-sonos-cell.svg
Generic Resistors
Generic resistors
-----------------
Generic resistors are supported in the PDK but are not recommended for analog applications. Resistor values will be extracted from the layout as long as the resistor layer is utilized, for LVS against schematic elements.
@ -1214,8 +1214,8 @@ A generic version of the poly resistor is also available, which permits user inp
.. |symbol-res_xhigh_po| image:: device-details/res_xhigh/symbol-res_xhigh_po.svg
MiM Capacitor
-------------
MiM capacitors
--------------
Spice Model Information
~~~~~~~~~~~~~~~~~~~~~~~

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@ -1,5 +1,5 @@
MiM Capacitor
-------------
MiM capacitors
--------------
Spice Model Information
~~~~~~~~~~~~~~~~~~~~~~~

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@ -1,4 +1,4 @@
1.8V Accumulation-Mode MOS Varactors
1.8V accumulation-mode MOS varactors
------------------------------------
Spice Model Information

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@ -1,4 +1,4 @@
NMOS ESD FET
ESD NMOS FET
------------
Spice Model Information

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@ -1,4 +1,4 @@
20V NMOS zero-VT FET
20V zero-VT NMOS FET
--------------------
Spice Model Information

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@ -1,5 +1,5 @@
Bipolar (NPN)
-------------
Bipolar NPN transistor
----------------------
Spice Model Information
~~~~~~~~~~~~~~~~~~~~~~~

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@ -1,5 +1,5 @@
Bipolar (PNP)
-------------
Bipolar PNP transistor
----------------------
Spice Model Information
~~~~~~~~~~~~~~~~~~~~~~~

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@ -1,4 +1,4 @@
Generic Resistors
Generic resistors
-----------------
Generic resistors are supported in the PDK but are not recommended for analog applications. Resistor values will be extracted from the layout as long as the resistor layer is utilized, for LVS against schematic elements.