docs: Improve sort order of device-details page.
Signed-off-by: Tim 'mithro' Ansell <me@mith.ro>
This commit is contained in:
Tim 'mithro' Ansell
parent
a335a40331
commit
0a35656db1
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@ -2,7 +2,9 @@
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import re
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import os
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import sys
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from pathlib import Path
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from pprint import pformat
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RE_IMAGE = re.compile('.. (.*) image:: (.*)')
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@ -11,7 +13,17 @@ RE_INCLUDE = re.compile('.. include:: (.*)')
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print('Device Details')
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print('==============')
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print()
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for fname in sorted(Path('.').rglob('index.rst')):
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def r(m):
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n = m.group(0)
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while len(n) < 10:
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n = '0'+n
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return n
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def k(s):
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return re.sub('([0-9.V/]*)', r, str(s))
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for fname in sorted(Path('.').rglob('index.rst'), key=k):
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with open(fname) as f:
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data = f.read()
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@ -407,81 +407,48 @@ Symbols for the diodes are shown below
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.. |symbol-diode-17| image:: device-details/diodes/symbol-diode-17.svg
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11V/16V NMOS FET
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----------------
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Spice Model Information
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~~~~~~~~~~~~~~~~~~~~~~~
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- Cell Name: :cell:`sky130_fd_pr_base__nfetexd`
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- Model Name: :model:`sky130_fd_pr_base__nvhv`
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Operating Voltages where SPICE models are valid, subject to SOA limitations:
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- V\ :sub:`DS` = 0 to +16V (V:sub:`GS` = 0)
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- V\ :sub:`DS` = 0 to +11V (V:sub:`GS` > 0)
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- V\ :sub:`GS` = 0 to 5.5V
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- V\ :sub:`BS` = 0 to -2.0V
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Details
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~~~~~~~
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Major model output parameters are shown below and compared against the EDR (e-test) specs
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.. include:: device-details/fet-nmos-11v-16v/fet-nmos-11v-16v-table0.rst
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The symbol of the :model:`sky130_fd_pr_base__nvhv` (11V/16V NMOS FET) is shown below:
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|symbol-11v-16v-nmos-fet|
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The cross-section of the 11V/16VV NMOS FET is shown below.
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|cross-section-11v-16v-nmos-fet|
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.. |symbol-11v-16v-nmos-fet| image:: device-details/fet-nmos-11v-16v/symbol-11v-16v-nmos-fet.svg
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.. |cross-section-11v-16v-nmos-fet| image:: device-details/fet-nmos-11v-16v/cross-section-11v-16v-nmos-fet.svg
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1.8V NMOS FET
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-------------
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NMOS ESD FET
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------------
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Spice Model Information
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~~~~~~~~~~~~~~~~~~~~~~~
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- Cell Name: :cell:`sky130_fd_pr_base__nfet`
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- Model Name: :model:`sky130_fd_pr_base__nshort`
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- Model Name: :model:`sky130_fd_pr_base__nshortesd`, :model:`sky130_fd_pr_base__nhvesd`, :model:`sky130_fd_pr_base__nhvesdnative`
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Operating Voltages where SPICE models are valid
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- V\ :sub:`DS` = 0 to 1.95V
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- V\ :sub:`GS` = 0 to 1.95V
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- V\ :sub:`BS` = +0.3 to -1.95V
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- V\ :sub:`DS` = 0 to 11.0V (nhv\*), 0 to 1.95V (nshort\*)
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- V\ :sub:`GS` = 0 to 5.0V (nhv\*), 0 to 1.95V (nshort\*)
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- V\ :sub:`BS` = 0 to -5.5V, (nhv), +0.3 to -5.5V (nhvnative), 0 to -1.95V (nshort\*)
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Details
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~~~~~~~
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Major model output parameters are shown below and compared against the EDR (e-test) specs.
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The ESD FET’s differ from the regular NMOS devices in several aspects, most notably:
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- Increased isolation spacing from contacts to surrounding STI
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- Increased drain contact-to-gate spacing
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- Placement of n-well under the drain contacts
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Major model output parameters are shown below and compared against the EDR (e-test) specs
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.. include:: device-details/fet-nmos-1v8/fet-nmos-1v8-table0.rst
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.. include:: device-details/fet-nmos-esd/fet-nmos-esd-table0.rst
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The symbol of the :model:`sky130_fd_pr_base__nshort` (1.8V NMOS FET) is shown below:
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The symbols of the :model:`sky130_fd_pr_base__nhvesd` and :model:`sky130_fd_pr_base__nhvesdnative` (ESD NMOS FET) are shown below:
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|symbol-1v8-nmos-fet|
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|symbol-nmos-esd-fet-nhvesd| |symbol-nmos-esd-fet-nhvesdnative|
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The cross-section of the NMOS FET is shown below:
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The cross-section of the ESD NMOS FET is shown below.
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|cross-section-1v8-nmos-fet|
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|cross-section-nmos-esd-fet|
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The device shows the p-well inside of a deep n-well, but it can be made either with or without the DNW under the p-well
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.. |symbol-1v8-nmos-fet| image:: device-details/fet-nmos-1v8/symbol-1v8-nmos-fet.svg
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.. |cross-section-1v8-nmos-fet| image:: device-details/fet-nmos-1v8/cross-section-1v8-nmos-fet.svg
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.. |symbol-nmos-esd-fet-nhvesd| image:: device-details/fet-nmos-esd/symbol-nmos-esd-fet-nhvesd.svg
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.. |symbol-nmos-esd-fet-nhvesdnative| image:: device-details/fet-nmos-esd/symbol-nmos-esd-fet-nhvesdnative.svg
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.. |cross-section-nmos-esd-fet| image:: device-details/fet-nmos-esd/cross-section-nmos-esd-fet.svg
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1.8V low-VT NMOS FET
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@ -528,6 +495,203 @@ The cross-section of the low-VT NMOS FET is shown below. The cross-section is id
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.. |cross-section-1v8-low-vt-nmos-fet| image:: device-details/fet-nmos-1v8-low-vt/cross-section-1v8-low-vt-nmos-fet.svg
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1.8V NMOS FET
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-------------
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Spice Model Information
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~~~~~~~~~~~~~~~~~~~~~~~
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- Cell Name: :cell:`sky130_fd_pr_base__nfet`
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- Model Name: :model:`sky130_fd_pr_base__nshort`
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Operating Voltages where SPICE models are valid
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- V\ :sub:`DS` = 0 to 1.95V
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- V\ :sub:`GS` = 0 to 1.95V
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- V\ :sub:`BS` = +0.3 to -1.95V
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Details
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~~~~~~~
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Major model output parameters are shown below and compared against the EDR (e-test) specs.
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.. include:: device-details/fet-nmos-1v8/fet-nmos-1v8-table0.rst
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The symbol of the :model:`sky130_fd_pr_base__nshort` (1.8V NMOS FET) is shown below:
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|symbol-1v8-nmos-fet|
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The cross-section of the NMOS FET is shown below:
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|cross-section-1v8-nmos-fet|
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The device shows the p-well inside of a deep n-well, but it can be made either with or without the DNW under the p-well
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.. |symbol-1v8-nmos-fet| image:: device-details/fet-nmos-1v8/symbol-1v8-nmos-fet.svg
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.. |cross-section-1v8-nmos-fet| image:: device-details/fet-nmos-1v8/cross-section-1v8-nmos-fet.svg
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3.0V native NMOS FET
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--------------------
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Spice Model Information
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~~~~~~~~~~~~~~~~~~~~~~~
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- Cell Name: :cell:`sky130_fd_pr_base__nfet`
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- Model Name: :model:`sky130_fd_pr_base__ntvnative`
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Operating Voltages where SPICE models are valid for :model:`sky130_fd_pr_base__ntvnative`
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- V\ :sub:`DS` = 0 to 3.3V
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- V\ :sub:`GS` = 0 to 3.3V
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- V\ :sub:`BS` = 0 to -3.3V
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Details
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~~~~~~~
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The native device is constructed by blocking out all VT implants.
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The model and EDR (e-test) parameters are compared below. Note that the minimum gate length for 3V operation is 0.5 µm.
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.. include:: device-details/fet-nmos-3v0-native/../fet-nmos-3v0-and-5v0-native/fet-nmos-3v0-and-5v0-native-table0.rst
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The symbols for the :model:`sky130_fd_pr_base__ntvnative` devices are shown below.
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|symbol-3v0-native-nmos-fet-ntvnative|
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The cross-section of the native devices is shown below.
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|cross-section-3v0-and-5v0-native-nmos-fet|
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.. |symbol-3v0-native-nmos-fet-ntvnative| image:: device-details/fet-nmos-3v0-native/symbol-3v0-nmos-fet-ntvnative.svg
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.. |cross-section-3v0-and-5v0-native-nmos-fet| image:: device-details/fet-nmos-3v0-native/cross-section-3v0-and-5v0-native-nmos-fet.svg
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.. note:: The only differences between the :model:`sky130_fd_pr_base__nvtnative` and :model:`sky130_fd_pr_base__nhvnative` devices are the minimum gate length and the VDS requirements.
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5.0V native NMOS FET
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--------------------
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Spice Model Information
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~~~~~~~~~~~~~~~~~~~~~~~
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- Cell Name: :cell:`sky130_fd_pr_base__nfet`
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- Model Name: :model:`sky130_fd_pr_base__nhvnative`
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Operating Voltages where SPICE models are valid for :model:`sky130_fd_pr_base__nhvnative`
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- V\ :sub:`DS` = 0 to 5.5V
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- V\ :sub:`GS` = 0 to 5.5V
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- V\ :sub:`BS` = +0.3 to -5.5V
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Details
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~~~~~~~
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The native device is constructed by blocking out all VT implants.
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The model and EDR (e-test) parameters are compared below.
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The 5V device has minimum gate length of 0.9 µm.
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.. include:: device-details/fet-nmos-5v0-native/../fet-nmos-3v0-and-5v0-native/fet-nmos-3v0-and-5v0-native-table0.rst
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The symbols for the :model:`sky130_fd_pr_base__nhvnative` devices are shown below.
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|symbol-5v0-native-nmos-fet-nhvnative|
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The cross-section of the native devices is shown below.
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.. note:: The only differences between the :model:`sky130_fd_pr_base__nvtnative` and :model:`sky130_fd_pr_base__nhvnative` devices are the minimum gate length and the VDS requirements.
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|cross-section-3v0-and-5v0-native-nmos-fet|
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.. |symbol-5v0-native-nmos-fet-nhvnative| image:: device-details/fet-nmos-5v0-native/symbol-5v0-native-nmos-fet-nhvnative.svg
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.. |cross-section-3v0-and-5v0-native-nmos-fet| image:: device-details/fet-nmos-5v0-native/../fet-nmos-3v0-and-5v0-native/cross-section-3v0-and-5v0-native-nmos-fet.svg
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5.0V/10.5V NMOS FET
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-------------------
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Spice Model Information
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~~~~~~~~~~~~~~~~~~~~~~~
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- Cell Name: :cell:`sky130_fd_pr_base__nfet`
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- Model Name: :model:`sky130_fd_pr_base__nhv`
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Operating Voltages where SPICE models are valid
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- V\ :sub:`DS` = 0 to 11.0V
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- V\ :sub:`GS` = 0 to 5.5V
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- V\ :sub:`BS` = 0 to -5.5V
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Details
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~~~~~~~
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Major model output parameters are shown below and compared against the EDR (e-test) specs
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.. include:: device-details/fet-nmos-5v0-10v5/fet-nmos-5v0-10v5-table0.rst
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The symbols of the :model:`sky130_fd_pr_base__nhv` (5.0/10.5 V NMOS FET) is shown below:
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|symbol-5v0-10v5-nmos-fet|
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The cross-section of the 5.0/10.5 V NMOS FET is shown below.
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|cross-section-5v0-10v5-nmos-fet|
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.. |symbol-5v0-10v5-nmos-fet| image:: device-details/fet-nmos-5v0-10v5/symbol-5v0-10v5-nmos-fet.svg
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.. |cross-section-5v0-10v5-nmos-fet| image:: device-details/fet-nmos-5v0-10v5/cross-section-5v0-10v5-nmos-fet.svg
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11V/16V NMOS FET
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----------------
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Spice Model Information
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~~~~~~~~~~~~~~~~~~~~~~~
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- Cell Name: :cell:`sky130_fd_pr_base__nfetexd`
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- Model Name: :model:`sky130_fd_pr_base__nvhv`
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Operating Voltages where SPICE models are valid, subject to SOA limitations:
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- V\ :sub:`DS` = 0 to +16V (V:sub:`GS` = 0)
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- V\ :sub:`DS` = 0 to +11V (V:sub:`GS` > 0)
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- V\ :sub:`GS` = 0 to 5.5V
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- V\ :sub:`BS` = 0 to -2.0V
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Details
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~~~~~~~
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Major model output parameters are shown below and compared against the EDR (e-test) specs
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.. include:: device-details/fet-nmos-11v-16v/fet-nmos-11v-16v-table0.rst
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The symbol of the :model:`sky130_fd_pr_base__nvhv` (11V/16V NMOS FET) is shown below:
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|symbol-11v-16v-nmos-fet|
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The cross-section of the 11V/16VV NMOS FET is shown below.
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|cross-section-11v-16v-nmos-fet|
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.. |symbol-11v-16v-nmos-fet| image:: device-details/fet-nmos-11v-16v/symbol-11v-16v-nmos-fet.svg
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.. |cross-section-11v-16v-nmos-fet| image:: device-details/fet-nmos-11v-16v/cross-section-11v-16v-nmos-fet.svg
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20V NMOS FET
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------------
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@ -686,252 +850,6 @@ The cross-section of the 20V NMOS zero-VT FET is shown below.
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.. |cross-section-20v-nmos-zero-vt-fet| image:: device-details/fet-nmos-20v-zero-vt/cross-section-20v-nmos-zero-vt-fet.svg
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3.0V native NMOS FET
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--------------------
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Spice Model Information
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~~~~~~~~~~~~~~~~~~~~~~~
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- Cell Name: :cell:`sky130_fd_pr_base__nfet`
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- Model Name: :model:`sky130_fd_pr_base__ntvnative`
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Operating Voltages where SPICE models are valid for :model:`sky130_fd_pr_base__ntvnative`
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- V\ :sub:`DS` = 0 to 3.3V
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- V\ :sub:`GS` = 0 to 3.3V
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- V\ :sub:`BS` = 0 to -3.3V
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Details
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~~~~~~~
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The native device is constructed by blocking out all VT implants.
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The model and EDR (e-test) parameters are compared below. Note that the minimum gate length for 3V operation is 0.5 µm.
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.. include:: device-details/fet-nmos-3v0-native/../fet-nmos-3v0-and-5v0-native/fet-nmos-3v0-and-5v0-native-table0.rst
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The symbols for the :model:`sky130_fd_pr_base__ntvnative` devices are shown below.
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|symbol-3v0-native-nmos-fet-ntvnative|
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The cross-section of the native devices is shown below.
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|cross-section-3v0-and-5v0-native-nmos-fet|
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.. |symbol-3v0-native-nmos-fet-ntvnative| image:: device-details/fet-nmos-3v0-native/symbol-3v0-nmos-fet-ntvnative.svg
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.. |cross-section-3v0-and-5v0-native-nmos-fet| image:: device-details/fet-nmos-3v0-native/cross-section-3v0-and-5v0-native-nmos-fet.svg
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.. note:: The only differences between the :model:`sky130_fd_pr_base__nvtnative` and :model:`sky130_fd_pr_base__nhvnative` devices are the minimum gate length and the VDS requirements.
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5.0V/10.5V NMOS FET
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-------------------
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Spice Model Information
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~~~~~~~~~~~~~~~~~~~~~~~
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- Cell Name: :cell:`sky130_fd_pr_base__nfet`
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- Model Name: :model:`sky130_fd_pr_base__nhv`
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Operating Voltages where SPICE models are valid
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- V\ :sub:`DS` = 0 to 11.0V
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- V\ :sub:`GS` = 0 to 5.5V
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- V\ :sub:`BS` = 0 to -5.5V
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Details
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~~~~~~~
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Major model output parameters are shown below and compared against the EDR (e-test) specs
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.. include:: device-details/fet-nmos-5v0-10v5/fet-nmos-5v0-10v5-table0.rst
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The symbols of the :model:`sky130_fd_pr_base__nhv` (5.0/10.5 V NMOS FET) is shown below:
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|symbol-5v0-10v5-nmos-fet|
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The cross-section of the 5.0/10.5 V NMOS FET is shown below.
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|cross-section-5v0-10v5-nmos-fet|
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.. |symbol-5v0-10v5-nmos-fet| image:: device-details/fet-nmos-5v0-10v5/symbol-5v0-10v5-nmos-fet.svg
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.. |cross-section-5v0-10v5-nmos-fet| image:: device-details/fet-nmos-5v0-10v5/cross-section-5v0-10v5-nmos-fet.svg
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5.0V native NMOS FET
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--------------------
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|
||||
Spice Model Information
|
||||
~~~~~~~~~~~~~~~~~~~~~~~
|
||||
|
||||
- Cell Name: :cell:`sky130_fd_pr_base__nfet`
|
||||
- Model Name: :model:`sky130_fd_pr_base__nhvnative`
|
||||
|
||||
Operating Voltages where SPICE models are valid for :model:`sky130_fd_pr_base__nhvnative`
|
||||
|
||||
- V\ :sub:`DS` = 0 to 5.5V
|
||||
- V\ :sub:`GS` = 0 to 5.5V
|
||||
- V\ :sub:`BS` = +0.3 to -5.5V
|
||||
|
||||
Details
|
||||
~~~~~~~
|
||||
|
||||
The native device is constructed by blocking out all VT implants.
|
||||
|
||||
The model and EDR (e-test) parameters are compared below.
|
||||
|
||||
The 5V device has minimum gate length of 0.9 µm.
|
||||
|
||||
|
||||
.. include:: device-details/fet-nmos-5v0-native/../fet-nmos-3v0-and-5v0-native/fet-nmos-3v0-and-5v0-native-table0.rst
|
||||
|
||||
|
||||
The symbols for the :model:`sky130_fd_pr_base__nhvnative` devices are shown below.
|
||||
|
||||
|symbol-5v0-native-nmos-fet-nhvnative|
|
||||
|
||||
The cross-section of the native devices is shown below.
|
||||
|
||||
.. note:: The only differences between the :model:`sky130_fd_pr_base__nvtnative` and :model:`sky130_fd_pr_base__nhvnative` devices are the minimum gate length and the VDS requirements.
|
||||
|
||||
|cross-section-3v0-and-5v0-native-nmos-fet|
|
||||
|
||||
.. |symbol-5v0-native-nmos-fet-nhvnative| image:: device-details/fet-nmos-5v0-native/symbol-5v0-native-nmos-fet-nhvnative.svg
|
||||
.. |cross-section-3v0-and-5v0-native-nmos-fet| image:: device-details/fet-nmos-5v0-native/../fet-nmos-3v0-and-5v0-native/cross-section-3v0-and-5v0-native-nmos-fet.svg
|
||||
|
||||
|
||||
NMOS ESD FET
|
||||
------------
|
||||
|
||||
Spice Model Information
|
||||
~~~~~~~~~~~~~~~~~~~~~~~
|
||||
|
||||
- Cell Name: :cell:`sky130_fd_pr_base__nfet`
|
||||
- Model Name: :model:`sky130_fd_pr_base__nshortesd`, :model:`sky130_fd_pr_base__nhvesd`, :model:`sky130_fd_pr_base__nhvesdnative`
|
||||
|
||||
Operating Voltages where SPICE models are valid
|
||||
|
||||
- V\ :sub:`DS` = 0 to 11.0V (nhv\*), 0 to 1.95V (nshort\*)
|
||||
- V\ :sub:`GS` = 0 to 5.0V (nhv\*), 0 to 1.95V (nshort\*)
|
||||
- V\ :sub:`BS` = 0 to -5.5V, (nhv), +0.3 to -5.5V (nhvnative), 0 to -1.95V (nshort\*)
|
||||
|
||||
Details
|
||||
~~~~~~~
|
||||
|
||||
The ESD FET’s differ from the regular NMOS devices in several aspects, most notably:
|
||||
|
||||
- Increased isolation spacing from contacts to surrounding STI
|
||||
- Increased drain contact-to-gate spacing
|
||||
- Placement of n-well under the drain contacts
|
||||
|
||||
Major model output parameters are shown below and compared against the EDR (e-test) specs
|
||||
|
||||
|
||||
.. include:: device-details/fet-nmos-esd/fet-nmos-esd-table0.rst
|
||||
|
||||
|
||||
|
||||
The symbols of the :model:`sky130_fd_pr_base__nhvesd` and :model:`sky130_fd_pr_base__nhvesdnative` (ESD NMOS FET) are shown below:
|
||||
|
||||
|symbol-nmos-esd-fet-nhvesd| |symbol-nmos-esd-fet-nhvesdnative|
|
||||
|
||||
The cross-section of the ESD NMOS FET is shown below.
|
||||
|
||||
|cross-section-nmos-esd-fet|
|
||||
|
||||
.. |symbol-nmos-esd-fet-nhvesd| image:: device-details/fet-nmos-esd/symbol-nmos-esd-fet-nhvesd.svg
|
||||
.. |symbol-nmos-esd-fet-nhvesdnative| image:: device-details/fet-nmos-esd/symbol-nmos-esd-fet-nhvesdnative.svg
|
||||
.. |cross-section-nmos-esd-fet| image:: device-details/fet-nmos-esd/cross-section-nmos-esd-fet.svg
|
||||
|
||||
|
||||
10V/16V PMOS FET
|
||||
----------------
|
||||
|
||||
Spice Model Information
|
||||
~~~~~~~~~~~~~~~~~~~~~~~
|
||||
|
||||
- Cell Name: :cell:`sky130_fd_pr_base__pfetexd`
|
||||
- Model Name: :model:`sky130_fd_pr_base__pvhv`
|
||||
|
||||
Operating Voltages where SPICE models are valid, subject to SOA limitations:
|
||||
|
||||
- V\ :sub:`DS` = 0 to -16V (V:sub:`GS` = 0)
|
||||
- V\ :sub:`DS` = 0 to -10V (V:sub:`GS` < 0)
|
||||
- V\ :sub:`GS` = 0 to -5.5V
|
||||
- V\ :sub:`BS` = 0 to +2.0V
|
||||
|
||||
Details
|
||||
~~~~~~~
|
||||
|
||||
Major model output parameters are shown below and compared against the EDR (e-test) specs
|
||||
|
||||
|
||||
.. include:: device-details/fet-pmos-10v-16v/fet-pmos-10v-16v-table0.rst
|
||||
|
||||
|
||||
|
||||
The symbol of the :model:`sky130_fd_pr_base__pvhv` (10V/16V PMOS FET) is shown below:
|
||||
|
||||
|symbol-10v-16v-pmos-fet|
|
||||
|
||||
The cross-section of the 10V/16V PMOS FET is shown below.
|
||||
|
||||
|cross-section-10v-16v-pmos-fet|
|
||||
|
||||
.. |symbol-10v-16v-pmos-fet| image:: device-details/fet-pmos-10v-16v/symbol-10v-16v-pmos-fet.svg
|
||||
.. |cross-section-10v-16v-pmos-fet| image:: device-details/fet-pmos-10v-16v/cross-section-10v-16v-pmos-fet.svg
|
||||
|
||||
|
||||
1.8V PMOS FET
|
||||
-------------
|
||||
|
||||
Spice Model Information
|
||||
~~~~~~~~~~~~~~~~~~~~~~~
|
||||
|
||||
- Cell Name: :cell:`sky130_fd_pr_base__pfet`
|
||||
- Model Name: :model:`sky130_fd_pr_base__pshort`
|
||||
|
||||
Operating Voltages where SPICE models are valid
|
||||
|
||||
- V\ :sub:`DS` = 0 to -1.95V
|
||||
- V\ :sub:`GS` = 0 to -1.95V
|
||||
- V\ :sub:`BS` = -0.1 to +1.95V
|
||||
|
||||
Details
|
||||
~~~~~~~
|
||||
|
||||
Major model output parameters are shown below and compared against the EDR (e-test) specs.
|
||||
|
||||
|
||||
.. include:: device-details/fet-pmos-1v8/fet-pmos-1v8-table0.rst
|
||||
|
||||
|
||||
|
||||
Inverter Gate Delays using nshort/:model:`sky130_fd_pr_base__pshort` device combinations:
|
||||
|
||||
|
||||
.. include:: device-details/fet-pmos-1v8/fet-pmos-1v8-table1.rst
|
||||
|
||||
|
||||
|
||||
The symbol of the :model:`sky130_fd_pr_base__pshort` (1.8V PMOS FET) is shown below:
|
||||
|
||||
|symbol-1v8-pmos-fet|
|
||||
|
||||
The cross-section of the PMOS FET is shown below:
|
||||
|
||||
|cross-section-1v8-pmos-fet|
|
||||
|
||||
.. |symbol-1v8-pmos-fet| image:: device-details/fet-pmos-1v8/symbol-1v8-pmos-fet.svg
|
||||
.. |cross-section-1v8-pmos-fet| image:: device-details/fet-pmos-1v8/cross-section-1v8-pmos-fet.svg
|
||||
|
||||
|
||||
1.8V high-VT PMOS FET
|
||||
---------------------
|
||||
|
||||
|
|
@ -1020,48 +938,48 @@ The cross-section of the low-VT PMOS FET is shown below. The cross-section is id
|
|||
.. |cross-section-1v8-low-vt-pmos-fet| image:: device-details/fet-pmos-1v8-low-vt/cross-section-1v8-low-vt-pmos-fet.svg
|
||||
|
||||
|
||||
20V PMOS FET
|
||||
------------
|
||||
1.8V PMOS FET
|
||||
-------------
|
||||
|
||||
Spice Model Information
|
||||
~~~~~~~~~~~~~~~~~~~~~~~
|
||||
|
||||
- Cell Name: :cell:`sky130_fd_pr_base__pfetexd`
|
||||
- Model Name: :model:`sky130_fd_pr_base__p20vhv1`
|
||||
- Cell Name: :cell:`sky130_fd_pr_base__pfet`
|
||||
- Model Name: :model:`sky130_fd_pr_base__pshort`
|
||||
|
||||
Operating Voltages where SPICE models are valid, subject to SOA limitations:
|
||||
Operating Voltages where SPICE models are valid
|
||||
|
||||
- V\ :sub:`DS` = 0 to -22V
|
||||
- V\ :sub:`GS` = 0 to -5.5V
|
||||
- V\ :sub:`BS` = 0 to +2.0V
|
||||
- V\ :sub:`DS` = 0 to -1.95V
|
||||
- V\ :sub:`GS` = 0 to -1.95V
|
||||
- V\ :sub:`BS` = -0.1 to +1.95V
|
||||
|
||||
Details
|
||||
~~~~~~~
|
||||
|
||||
The 20V NMOS FET has similar construction to the 11V/16V NMOS FET, with several differences:
|
||||
|
||||
- Longer drift region
|
||||
- Longer poly gate
|
||||
- Larger W/L
|
||||
- Devices placed in pairs (drain in middle, sources on outside)
|
||||
|
||||
Major model output parameters are shown below and compared against the EDR (e-test) specs
|
||||
Major model output parameters are shown below and compared against the EDR (e-test) specs.
|
||||
|
||||
|
||||
.. include:: device-details/fet-pmos-20v/fet-pmos-20v-table0.rst
|
||||
.. include:: device-details/fet-pmos-1v8/fet-pmos-1v8-table0.rst
|
||||
|
||||
|
||||
|
||||
The symbol of the :model:`sky130_fd_pr_base__p20vhv1` (20V PMOS FET) is shown below.
|
||||
Inverter Gate Delays using nshort/:model:`sky130_fd_pr_base__pshort` device combinations:
|
||||
|
||||
|symbol-20v-pmos-fet|
|
||||
|
||||
The cross-section of the 20V PMOS FET is shown below.
|
||||
.. include:: device-details/fet-pmos-1v8/fet-pmos-1v8-table1.rst
|
||||
|
||||
|cross-section-20v-pmos-fet|
|
||||
|
||||
.. |symbol-20v-pmos-fet| image:: device-details/fet-pmos-20v/symbol-20v-pmos-fet.svg
|
||||
.. |cross-section-20v-pmos-fet| image:: device-details/fet-pmos-20v/cross-section-20v-pmos-fet.svg
|
||||
|
||||
The symbol of the :model:`sky130_fd_pr_base__pshort` (1.8V PMOS FET) is shown below:
|
||||
|
||||
|symbol-1v8-pmos-fet|
|
||||
|
||||
The cross-section of the PMOS FET is shown below:
|
||||
|
||||
|cross-section-1v8-pmos-fet|
|
||||
|
||||
.. |symbol-1v8-pmos-fet| image:: device-details/fet-pmos-1v8/symbol-1v8-pmos-fet.svg
|
||||
.. |cross-section-1v8-pmos-fet| image:: device-details/fet-pmos-1v8/cross-section-1v8-pmos-fet.svg
|
||||
|
||||
|
||||
5.0V/10.5V PMOS FET
|
||||
|
|
@ -1109,6 +1027,88 @@ The cross-section of the 5.0V PMOS FET is shown below.
|
|||
.. |cross-section-5v0-10v5-pmos-fet| image:: device-details/fet-pmos-5v0-10v5/cross-section-5v0-10v5-pmos-fet.svg
|
||||
|
||||
|
||||
10V/16V PMOS FET
|
||||
----------------
|
||||
|
||||
Spice Model Information
|
||||
~~~~~~~~~~~~~~~~~~~~~~~
|
||||
|
||||
- Cell Name: :cell:`sky130_fd_pr_base__pfetexd`
|
||||
- Model Name: :model:`sky130_fd_pr_base__pvhv`
|
||||
|
||||
Operating Voltages where SPICE models are valid, subject to SOA limitations:
|
||||
|
||||
- V\ :sub:`DS` = 0 to -16V (V:sub:`GS` = 0)
|
||||
- V\ :sub:`DS` = 0 to -10V (V:sub:`GS` < 0)
|
||||
- V\ :sub:`GS` = 0 to -5.5V
|
||||
- V\ :sub:`BS` = 0 to +2.0V
|
||||
|
||||
Details
|
||||
~~~~~~~
|
||||
|
||||
Major model output parameters are shown below and compared against the EDR (e-test) specs
|
||||
|
||||
|
||||
.. include:: device-details/fet-pmos-10v-16v/fet-pmos-10v-16v-table0.rst
|
||||
|
||||
|
||||
|
||||
The symbol of the :model:`sky130_fd_pr_base__pvhv` (10V/16V PMOS FET) is shown below:
|
||||
|
||||
|symbol-10v-16v-pmos-fet|
|
||||
|
||||
The cross-section of the 10V/16V PMOS FET is shown below.
|
||||
|
||||
|cross-section-10v-16v-pmos-fet|
|
||||
|
||||
.. |symbol-10v-16v-pmos-fet| image:: device-details/fet-pmos-10v-16v/symbol-10v-16v-pmos-fet.svg
|
||||
.. |cross-section-10v-16v-pmos-fet| image:: device-details/fet-pmos-10v-16v/cross-section-10v-16v-pmos-fet.svg
|
||||
|
||||
|
||||
20V PMOS FET
|
||||
------------
|
||||
|
||||
Spice Model Information
|
||||
~~~~~~~~~~~~~~~~~~~~~~~
|
||||
|
||||
- Cell Name: :cell:`sky130_fd_pr_base__pfetexd`
|
||||
- Model Name: :model:`sky130_fd_pr_base__p20vhv1`
|
||||
|
||||
Operating Voltages where SPICE models are valid, subject to SOA limitations:
|
||||
|
||||
- V\ :sub:`DS` = 0 to -22V
|
||||
- V\ :sub:`GS` = 0 to -5.5V
|
||||
- V\ :sub:`BS` = 0 to +2.0V
|
||||
|
||||
Details
|
||||
~~~~~~~
|
||||
|
||||
The 20V NMOS FET has similar construction to the 11V/16V NMOS FET, with several differences:
|
||||
|
||||
- Longer drift region
|
||||
- Longer poly gate
|
||||
- Larger W/L
|
||||
- Devices placed in pairs (drain in middle, sources on outside)
|
||||
|
||||
Major model output parameters are shown below and compared against the EDR (e-test) specs
|
||||
|
||||
|
||||
.. include:: device-details/fet-pmos-20v/fet-pmos-20v-table0.rst
|
||||
|
||||
|
||||
|
||||
The symbol of the :model:`sky130_fd_pr_base__p20vhv1` (20V PMOS FET) is shown below.
|
||||
|
||||
|symbol-20v-pmos-fet|
|
||||
|
||||
The cross-section of the 20V PMOS FET is shown below.
|
||||
|
||||
|cross-section-20v-pmos-fet|
|
||||
|
||||
.. |symbol-20v-pmos-fet| image:: device-details/fet-pmos-20v/symbol-20v-pmos-fet.svg
|
||||
.. |cross-section-20v-pmos-fet| image:: device-details/fet-pmos-20v/cross-section-20v-pmos-fet.svg
|
||||
|
||||
|
||||
Generic Resistors
|
||||
-----------------
|
||||
|
||||
|
|
|
|||
Loading…
Reference in New Issue