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skywater-pdk/docs/rules/device-details/nfet_g5v0d10v5/nfet_g5v0d10v5-table0.rst

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docs: Adding details for various supported devices. Each type of device includes; - General device description - Details about the spice model and operating conditions. - Images of the symbols for the device. - Image showing the cross-section of the device. The devices included are; - Bipolar (NPN) - Bipolar (PNP) - MiM Capacitor - Vertical Parallel Plate (VPP) capacitors - SONOS cells - SRAM cells - Diodes - 11V/16V NMOS FET - 1.8V NMOS FET - 1.8V low-VT NMOS FET - 20V NMOS FET - 20V isolated NMOS FET - 20V native NMOS FET - 20V NMOS zero-VT FET - 3.0V and 5.0V native NMOS FET - 5.0V/10.5V NMOS FET - NMOS ESD FET - 10V/16V PMOS FET - 1.8V PMOS FET - 1.8V high-VT PMOS FET - 1.8V low-VT PMOS FET - 20V PMOS FET - 5.0V/10.5V PMOS FET - Generic Resistors - P- poly precision resistors - P+ poly precision resistors - Varactors Signed-off-by: Tim 'mithro' Ansell <me@mith.ro> Temp.
2020-07-27 15:38:57 -05:00
.. list-table::
:header-rows: 2
:stub-columns: 1
* - Param
- W/L
- Units
- MODEL
-
-
-
-
- EDR
-
-
* -
-
-
- TT
- FF
- SS
- FS
- SF
- NOM
- MIN
- MAX
* - VTXNLH
- 7/8
- V
- 0.811
- 0.780
- 0.843
- 0.856
- 0.767
- 0.811
- 0.767
- 0.856
* - VTXNN42H
- 0.42/20
- V
- 0.813
- 0.764
- 0.862
- 0.883
- 0.743
- 0.813
- 0.743
- 0.883
* - VTXNS50H
- 7/0.50
- V
- 0.822
- 0.744
- 0.899
- 0.933
- 0.711
- 0.822
- 0.711
- 0.933
* - VTXNSN50H
- 0.42/0.50
- V
- 0.781
- 0.672
- 0.891
- 0.937
- 0.625
- 0.781
- 0.625
- 0.937
* - IDSNS50H
- 7/0.50
- mA
- 12.1
- 13.0
- 11.2
- 11.1
- 13.1
- 12.1
- 11.1
- 13.1
* - ILKN50H
- 7/0.50
- LOG A
- Max = -10.6
- -12.3
- -18
- -10.9
-
-
-
-