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skywater-pdk/docs/rules/device-details/nfet_20v0/nfet_20v0-table0.rst

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docs: Adding details for various supported devices. Each type of device includes; - General device description - Details about the spice model and operating conditions. - Images of the symbols for the device. - Image showing the cross-section of the device. The devices included are; - Bipolar (NPN) - Bipolar (PNP) - MiM Capacitor - Vertical Parallel Plate (VPP) capacitors - SONOS cells - SRAM cells - Diodes - 11V/16V NMOS FET - 1.8V NMOS FET - 1.8V low-VT NMOS FET - 20V NMOS FET - 20V isolated NMOS FET - 20V native NMOS FET - 20V NMOS zero-VT FET - 3.0V and 5.0V native NMOS FET - 5.0V/10.5V NMOS FET - NMOS ESD FET - 10V/16V PMOS FET - 1.8V PMOS FET - 1.8V high-VT PMOS FET - 1.8V low-VT PMOS FET - 20V PMOS FET - 5.0V/10.5V PMOS FET - Generic Resistors - P- poly precision resistors - P+ poly precision resistors - Varactors Signed-off-by: Tim 'mithro' Ansell <me@mith.ro> Temp.
2020-07-27 15:38:57 -05:00
.. list-table::
:header-rows: 2
:stub-columns: 1
* - Param
- W/L
- Units
- MODEL
-
-
-
-
- EDR
-
-
* -
-
-
- TT
- FF
- SS
- FS
- SF
- NOM
- MIN
- MAX
* - VTXN20VHV1
- 2\* 30/1.0
- V
- 0.823
- 0.643
- 1.004
- 1.004
- 0.643
- 0.8231
- 0.6432
- 1.004
* - VTBN20VHV1
- 2\* 30/1.0
- V
- 1.823
- 1.573
- 2.075
- 2.075
- 1.573
- 1.823
- 1.573
- 2.075
* - BVN20VHV1
- 2\* 30/1.0
- V
-
-
-
-
-
- 65.96
- 40
- 80
* - IBB20N20VHV1
- 2\* 30/1.0
- µA/µm
-
-
-
-
-
- 0.1623
- 0
- 0.6
* - ID5N20VHV1
- 2\* 30/1.0
- mA
- 1.537
- 2.579
- 0.892
- 0.892
- 2.579
- 1.528
- 0.8892
- 2.556
* - IDLN20VHV1
- 2\* 30/1.0
- mA
- 0.335
- 0.577
- 0.191
- 0.191
- 0.577
- 0.3326
- 0.1903
- 0.5709
* - IDSN20VHV1
- 2\* 30/1.0
- mA
- 13.35
- 17.34
- 9.34
- 9.34
- 17.34
- 13.34
- 9.335
- 17.34
* - RDSN20VHV1
- 2\* 30/1.0
- Ω
- 327.2
- 195.6
- 562.3
- 562.3
- 195.6
- 327.2
- 195.6
- 562.3
* - RSPON20VHV1
- 2\* 30/1.0
- mΩ-mm2
- 98.6
- 58.9
- 169.4
- 169.4
- 58.9
- 98.49
- 59.1
- 137.9
* - ILKN20VHV1
- 2\* 30/1.0
- LOG A
- Max = -8.6
- -11.63
- -18
- -8.162
-
-
-
-