59 lines
1013 B
Plaintext
59 lines
1013 B
Plaintext
#Fichier de parametrisation de TAS, HCMOS05, LEVEL 3, ST-SPICE
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#Les parametres sont calcules en tenant compte des shrinks
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#Par DIOURY karim, le 15/06/1995
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Technologie : prol05 Version : 2.0
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#Reference Simulator
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ESIM = ST-SPICE
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MODEL = MOS
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LEVEL = 3.0
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#shrink parameters (micron)
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DLN = 0.058
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DLP = 0.015
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DWN = -0.068
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DWP = -0.008
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#transistor characteristics
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#NMOS
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VTN = 0.709
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BN = 1.2177
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AN = 7.63e-5
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RNT = 13764.0
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#PMOS
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VTP = 0.676
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BP = 0.3302
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AP = 1.65e-05
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RPT = 34740.0
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#general parameters
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VDDmax = 3.0
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VTHR = 1.5
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VSSdeg = 0.952
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VDDdeg = 2.05
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TEMP = 70.0
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#dynamic capacitance: grid capacitance (in pF/u and pF/u2)
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CGSN = 2704.0e-6
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CGSP = 2704.0e-6
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CGPN = 430.0e-6
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CGPP = 380.0e-6
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#dynamic capacitance: drain capacitance (in pF/u and pF/u2)
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CDSN = 840.0e-6
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CDSP = 915.0e-6
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CDPN = 270.0e-6
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CDPP = 220.0e-6
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CDWN = 430.0e-6
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CDWP = 380.0e-6
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#dynamic capacitance: source capacitance (in pF/u and pF/u2)
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CSSN = 840.0e-6
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CSSP = 915.0e-6
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CSPN = 270.0e-6
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CSPP = 220.0e-6
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CSWN = 430.0e-6
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CSWP = 380.0e-6
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