153 lines
3.7 KiB
Verilog
153 lines
3.7 KiB
Verilog
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module \$mem (RD_CLK, RD_EN, RD_ADDR, RD_DATA, WR_CLK, WR_EN, WR_ADDR, WR_DATA);
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parameter MEMID = "";
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parameter SIZE = 256;
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parameter OFFSET = 0;
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parameter ABITS = 8;
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parameter WIDTH = 8;
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parameter signed INIT = 1'bx;
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parameter RD_PORTS = 1;
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parameter RD_CLK_ENABLE = 1'b1;
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parameter RD_CLK_POLARITY = 1'b1;
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parameter RD_TRANSPARENT = 1'b1;
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parameter WR_PORTS = 1;
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parameter WR_CLK_ENABLE = 1'b1;
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parameter WR_CLK_POLARITY = 1'b1;
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input [RD_PORTS-1:0] RD_CLK;
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input [RD_PORTS-1:0] RD_EN;
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input [RD_PORTS*ABITS-1:0] RD_ADDR;
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output reg [RD_PORTS*WIDTH-1:0] RD_DATA;
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input [WR_PORTS-1:0] WR_CLK;
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input [WR_PORTS*WIDTH-1:0] WR_EN;
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input [WR_PORTS*ABITS-1:0] WR_ADDR;
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input [WR_PORTS*WIDTH-1:0] WR_DATA;
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wire [1023:0] _TECHMAP_DO_ = "proc; clean";
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parameter _TECHMAP_CONNMAP_RD_CLK_ = 0;
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parameter _TECHMAP_CONNMAP_WR_CLK_ = 0;
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parameter _TECHMAP_CONSTVAL_RD_EN_ = 0;
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parameter _TECHMAP_BITS_CONNMAP_ = 0;
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parameter _TECHMAP_CONNMAP_WR_EN_ = 0;
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reg _TECHMAP_FAIL_;
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integer k;
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initial begin
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_TECHMAP_FAIL_ <= 0;
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// no initialized memories
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if (INIT !== 1'bx)
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_TECHMAP_FAIL_ <= 1;
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// only map cells with only one read and one write port
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if (RD_PORTS > 1 || WR_PORTS > 1)
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_TECHMAP_FAIL_ <= 1;
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// read enable must be constant high
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if (_TECHMAP_CONSTVAL_RD_EN_[0] !== 1'b1)
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_TECHMAP_FAIL_ <= 1;
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// we expect positive read clock and non-transparent reads
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if (RD_TRANSPARENT || !RD_CLK_ENABLE || !RD_CLK_POLARITY)
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_TECHMAP_FAIL_ <= 1;
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// we expect positive write clock
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if (!WR_CLK_ENABLE || !WR_CLK_POLARITY)
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_TECHMAP_FAIL_ <= 1;
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// only one global write enable bit is supported
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for (k = 1; k < WR_PORTS*WIDTH; k = k+1)
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if (_TECHMAP_CONNMAP_WR_EN_[0 +: _TECHMAP_BITS_CONNMAP_] !=
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_TECHMAP_CONNMAP_WR_EN_[k*_TECHMAP_BITS_CONNMAP_ +: _TECHMAP_BITS_CONNMAP_])
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_TECHMAP_FAIL_ <= 1;
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// read and write must be in same clock domain
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if (_TECHMAP_CONNMAP_RD_CLK_ != _TECHMAP_CONNMAP_WR_CLK_)
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_TECHMAP_FAIL_ <= 1;
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// we don't do small memories or memories with offsets
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if (OFFSET != 0 || ABITS < 4 || SIZE < 16)
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_TECHMAP_FAIL_ <= 1;
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end
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genvar i;
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generate
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for (i = 0; i < WIDTH; i=i+1) begin:slice
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\$__mem_4x1_generator #(
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.ABITS(ABITS),
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.SIZE(SIZE)
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) bit_slice (
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.CLK(RD_CLK),
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.RD_ADDR(RD_ADDR),
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.RD_DATA(RD_DATA[i]),
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.WR_ADDR(WR_ADDR),
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.WR_DATA(WR_DATA[i]),
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.WR_EN(WR_EN[0])
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);
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end
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endgenerate
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endmodule
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module \$__mem_4x1_generator (CLK, RD_ADDR, RD_DATA, WR_ADDR, WR_DATA, WR_EN);
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parameter ABITS = 4;
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parameter SIZE = 16;
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input CLK, WR_DATA, WR_EN;
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input [ABITS-1:0] RD_ADDR, WR_ADDR;
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output RD_DATA;
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wire [1023:0] _TECHMAP_DO_ = "proc; clean";
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generate
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if (ABITS > 4) begin
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wire high_rd_data, low_rd_data;
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if (SIZE > 2**(ABITS-1)) begin
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\$__mem_4x1_generator #(
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.ABITS(ABITS-1),
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.SIZE(SIZE - 2**(ABITS-1))
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) part_high (
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.CLK(CLK),
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.RD_ADDR(RD_ADDR[ABITS-2:0]),
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.RD_DATA(high_rd_data),
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.WR_ADDR(WR_ADDR[ABITS-2:0]),
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.WR_DATA(WR_DATA),
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.WR_EN(WR_EN && WR_ADDR[ABITS-1])
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);
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end else begin
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assign high_rd_data = 1'bx;
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end
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\$__mem_4x1_generator #(
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.ABITS(ABITS-1),
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.SIZE(SIZE > 2**(ABITS-1) ? 2**(ABITS-1) : SIZE)
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) part_low (
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.CLK(CLK),
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.RD_ADDR(RD_ADDR[ABITS-2:0]),
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.RD_DATA(low_rd_data),
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.WR_ADDR(WR_ADDR[ABITS-2:0]),
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.WR_DATA(WR_DATA),
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.WR_EN(WR_EN && !WR_ADDR[ABITS-1])
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);
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reg delayed_abit;
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always @(posedge CLK)
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delayed_abit <= RD_ADDR[ABITS-1];
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assign RD_DATA = delayed_abit ? high_rd_data : low_rd_data;
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end else begin
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MEM4X1 _TECHMAP_REPLACE_ (
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.CLK(CLK),
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.RD_ADDR(RD_ADDR),
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.RD_DATA(RD_DATA),
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.WR_ADDR(WR_ADDR),
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.WR_DATA(WR_DATA),
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.WR_EN(WR_EN)
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);
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end
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endgenerate
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endmodule
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