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STM32 flash erase timeout fix 

The current timeout for STM32 flash block erase and flash mass erase is
10 (ms), which is too tight, and fails around 50% of the time for me.
The data sheet for STM32F107VC specifies a maximum erase time of 40 ms
(for both operations).

I'd also consider it a bug that the code does not detect a timeout, but
just assumes that the operation has completed.  The attached patch does
not address this bug.

The attached patch increases the timeouts from 10 to 100 ms.  Please apply.

/Tobias
This commit is contained in:
Tobias Ringström 2010-04-30 14:04:14 +02:00 committed by Øyvind Harboe
parent da9f72ca0a
commit 14f4606dcb
1 changed files with 2 additions and 2 deletions
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4
src/flash/nor/stm32x.c
View File

@ -331,7 +331,7 @@ static int stm32x_erase(struct flash_bank *bank, int first, int last)
target_write_u32(target, STM32_FLASH_AR, bank->base + bank->sectors[i].offset); target_write_u32(target, STM32_FLASH_AR, bank->base + bank->sectors[i].offset);
target_write_u32(target, STM32_FLASH_CR, FLASH_PER | FLASH_STRT); target_write_u32(target, STM32_FLASH_CR, FLASH_PER | FLASH_STRT);
status = stm32x_wait_status_busy(bank, 10); status = stm32x_wait_status_busy(bank, 100);
if (status & FLASH_WRPRTERR) if (status & FLASH_WRPRTERR)
return ERROR_FLASH_OPERATION_FAILED; return ERROR_FLASH_OPERATION_FAILED;
@ -1183,7 +1183,7 @@ static int stm32x_mass_erase(struct flash_bank *bank)
target_write_u32(target, STM32_FLASH_CR, FLASH_MER); target_write_u32(target, STM32_FLASH_CR, FLASH_MER);
target_write_u32(target, STM32_FLASH_CR, FLASH_MER | FLASH_STRT); target_write_u32(target, STM32_FLASH_CR, FLASH_MER | FLASH_STRT);
status = stm32x_wait_status_busy(bank, 10); status = stm32x_wait_status_busy(bank, 100);
target_write_u32(target, STM32_FLASH_CR, FLASH_LOCK); target_write_u32(target, STM32_FLASH_CR, FLASH_LOCK);